Infineon HEXFET N-Channel MOSFET, 200 A, 40 V, 3-Pin TO-220 IRL1404ZPBF

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£3.64

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£4.36

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  • Plus 22 unit(s) shipping from 06 October 2025
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Packaging Options:
RS Stock No.:
688-7178
Mfr. Part No.:
IRL1404ZPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

40 V

Series

HEXFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

75 nC @ 5 V

Height

8.77mm

Minimum Operating Temperature

-55 °C

RoHS Status: Exempt

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon


Motor Control MOSFET


Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET


A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

Infineon HEXFET Series MOSFET, 200A Maximum Continuous Drain Current, 230W Maximum Power Dissipation - IRL1404ZPBF


This MOSFET is engineered for high-efficiency performance across various applications, particularly within automation, electronics, and electrical engineering. It ensures dependable operation in extreme conditions, which is crucial for advanced electronic systems. Its robust design makes it a preferred option for engineers seeking to optimise power management solutions.

Features & Benefits


• Capable of handling continuous drain currents up to 200A
• Low drain-source on-resistance enhances efficiency
• Suitable for high switching speeds to reduce energy losses
• Operates within a wide temperature range from -55°C to +175°C
• Offers a maximum gate threshold voltage of 2.7V for compatibility
• Designed in a through-hole TO-220 package for simple mounting

Applications


• Used in power amplifiers and converters
• Employed in DC-DC switching power supplies
• Integrated within motor control circuitry
• Ideal for automotive and renewable energy

What is the maximum voltage this component can handle?


It can manage a maximum drain-source voltage of 40V.

How does the gate threshold voltage affect operation?


A gate threshold voltage of 2.7V ensures efficient activation of the device, allowing for accurate control.

Can this component be used in high-temperature environments?


Yes, it is rated for operation up to +175°C, making it suitable for intense applications.

What is the significance of low drain-source resistance?


Low resistance minimises power losses, thereby enhancing overall system efficiency, especially at high current loads.

How should it be mounted for optimal performance?


It is recommended to mount the component according to the TO-220 package specifications to ensure effective thermal management and connectivity.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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