onsemi HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263), Surface Mount

RS Stock No.:: 807-6660
Mfr. Part No.:: HGT1S10N120BNST
Brand:: onsemi

onsemi HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263), Surface Mount

Price Each (In a Pack of 2)

£3.31

(exc. VAT)

£3.97

(inc. VAT)

Available to back order for despatch when stock is available

Units	Per unit	Per Pack*
2 - 6	£3.31	£6.62
8 - 38	£2.945	£5.89
40 - 198	£2.61	£5.22
200 - 398	£2.26	£4.52
400 +	£1.975	£3.95

*price indicative

RS Stock No.:: 807-6660
Mfr. Part No.:: HGT1S10N120BNST
Brand:: onsemi

Technical Reference

Legislation and Compliance

Product Details

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	80 A
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	298 W
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Channel Type	N
Pin Count	3
Switching Speed	1MHz
Transistor Configuration	Single
Dimensions	10.67 x 11.33 x 4.83mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C