Semikron SKM300GB126D, SEMITRANS3 , N-Channel Dual Half Bridge IGBT Module, 310 A max, 1200 V, Panel Mount
- RS Stock No.:
- 468-2505
- Mfr. Part No.:
- SKM300GB126D
- Brand:
- Semikron
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£361.71
(exc. VAT)
£434.05
(inc. VAT)
- RS Stock No.:
- 468-2505
- Mfr. Part No.:
- SKM300GB126D
- Brand:
- Semikron
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Semikron | |
| Maximum Continuous Collector Current | 310 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | SEMITRANS3 | |
| Configuration | Dual Half Bridge | |
| Mounting Type | Panel Mount | |
| Channel Type | N | |
| Pin Count | 7 | |
| Transistor Configuration | Series | |
| Dimensions | 106.4 x 61.4 x 30mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +150 °C | |
Select all | ||
|---|---|---|
Brand Semikron | ||
Maximum Continuous Collector Current 310 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Package Type SEMITRANS3 | ||
Configuration Dual Half Bridge | ||
Mounting Type Panel Mount | ||
Channel Type N | ||
Pin Count 7 | ||
Transistor Configuration Series | ||
Dimensions 106.4 x 61.4 x 30mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- DE
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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