Infineon F3L100R07W2E3B11BOMA1 IGBT Module, 117 A 650 V Module, Panel Mount
- RS Stock No.:
- 273-7363
- Mfr. Part No.:
- F3L100R07W2E3B11BOMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£71.00
(exc. VAT)
£85.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 14 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
1 - 4 | £71.00 |
5 - 9 | £69.59 |
10 - 99 | £64.56 |
100 - 249 | £59.17 |
250 + | £54.63 |
*price indicative
- RS Stock No.:
- 273-7363
- Mfr. Part No.:
- F3L100R07W2E3B11BOMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Maximum Continuous Collector Current | 117 A | |
Maximum Collector Emitter Voltage | 650 V | |
Maximum Gate Emitter Voltage | +/-20V | |
Maximum Power Dissipation | 300 W | |
Package Type | Module | |
Mounting Type | Panel Mount | |
Select all | ||
---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 117 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Maximum Power Dissipation 300 W | ||
Package Type Module | ||
Mounting Type Panel Mount | ||
The Infineon IGBT module has 650 V VCES, 100 A continuous DC collector current 3 level phase leg phase leg IGBT module with TRENCHSTOP IGBT3, Emitter Controlled 3 diode, NTC and Press FIT Contact Technology. This IGBT module increased blocking voltage capability to 650V and available with Al2O3 substrate with low thermal resistance.
Low VCEsat
Compact design
Rugged mounting
Low inductive design
Low Switching Losses
Compact design
Rugged mounting
Low inductive design
Low Switching Losses
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