Infineon IKZA75N65SS5XKSA1 Hybrid Discrete Diode, 75 A 650 V, 4-Pin PG-TO247-4-3, Through Hole
- RS Stock No.:
- 273-2993
- Mfr. Part No.:
- IKZA75N65SS5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
£179.40
(exc. VAT)
£215.40
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £5.98 | £179.40 |
| 60 + | £5.52 | £165.60 |
*price indicative
- RS Stock No.:
- 273-2993
- Mfr. Part No.:
- IKZA75N65SS5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Hybrid Discrete Diode | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 395W | |
| Package Type | PG-TO247-4-3 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.9mm | |
| Width | 15.7 mm | |
| Length | 20.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Hybrid Discrete Diode | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 395W | ||
Package Type PG-TO247-4-3 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.9mm | ||
Width 15.7 mm | ||
Length 20.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IGBT discrete with silicon carbide schottky diode has ultra low switching losses due to the combination of TRENCHSTOP 5 and CoolSiC diode technology as well as the kelvin emitter package.
Highest efficiency
Reduced cooling effort
Increased power density
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