Infineon, Type N-Channel IGBT, 12 A 600 V, 3-Pin TO-220, Surface
- RS Stock No.:
- 273-2959
- Mfr. Part No.:
- IGP06N60TXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£2.22
(exc. VAT)
£2.66
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £1.11 | £2.22 |
| 10 - 18 | £0.96 | £1.92 |
| 20 - 98 | £0.945 | £1.89 |
| 100 - 498 | £0.745 | £1.49 |
| 500 + | £0.635 | £1.27 |
*price indicative
- RS Stock No.:
- 273-2959
- Mfr. Part No.:
- IGP06N60TXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 12A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 88W | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.95mm | |
| Standards/Approvals | RoHS | |
| Series | TrenchStop | |
| Height | 4.57mm | |
| Width | 10.36 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 12A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 88W | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V | ||
Maximum Operating Temperature 175°C | ||
Length 15.95mm | ||
Standards/Approvals RoHS | ||
Series TrenchStop | ||
Height 4.57mm | ||
Width 10.36 mm | ||
Automotive Standard No | ||
The Infineon IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode fu
High ruggedness and temperature stable behaviour
High device reliability
Very tight parameter distribution
