Infineon IKP15N60TXKSA1 IGBT, 26 A 600 V, 3-Pin TO-220, Through Hole

View all IGBTs
Bulk discount available

Subtotal (1 pack of 10 units)*

£7.55

(exc. VAT)

£9.06

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 30 unit(s) ready to ship
  • Plus 950 unit(s) shipping from 20 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 40£0.755£7.55
50 - 90£0.717£7.17
100 - 240£0.687£6.87
250 - 490£0.657£6.57
500 +£0.612£6.12

*price indicative

Packaging Options:
RS Stock No.:
110-7783
Mfr. Part No.:
IKP15N60TXKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current

26 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

130 W

Package Type

TO-220

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.36 x 4.57 x 15.95mm

Maximum Operating Temperature

+175 °C

Energy Rating

0.81mJ

Gate Capacitance

860pF

Minimum Operating Temperature

-40 °C

Infineon TrenchStop IGBT Transistors, 600 and 650V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links