Infineon FF600R12IP4BOSA1 Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis
- RS Stock No.:
- 260-8893
- Mfr. Part No.:
- FF600R12IP4BOSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£463.97
(exc. VAT)
£556.76
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- 3 unit(s) shipping from 24 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | £463.97 |
| 2 + | £463.92 |
*price indicative
- RS Stock No.:
- 260-8893
- Mfr. Part No.:
- FF600R12IP4BOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 600A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 20mW | |
| Configuration | Dual | |
| Package Type | AG-PRIME2 | |
| Mount Type | Chassis | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.55V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 600A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 20mW | ||
Configuration Dual | ||
Package Type AG-PRIME2 | ||
Mount Type Chassis | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.55V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon PrimePACK 2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP IGBT4, emitter controlled 4 diode, NTC and soft switching chip, also available with thermal interface material. High short circuit capability, self limiting short circuit current, VCEsat with positive temperature coefficient.
Extended operation temperature
High DC stability
High power density
Standardized housing
Related links
- Infineon Dual IGBT Chassis
- Infineon FF600R12IE4BOSA1 Dual IGBT Chassis
- Infineon FF50R12RT4HOSA1 Dual IGBT Chassis
- Infineon FF600R12ME7BPSA1 600 A 1200 V AG-ECONOD, Through Hole
- Infineon Dual IGBT Chassis
- Infineon FF600R07ME4B11BPSA1 2 Independent IGBT Chassis
- Infineon FF600R07ME4BPSA1 2 Independent IGBT Chassis
- Infineon FF600R12KE4BOSA1 600 A 1200 V Surface