Infineon FF600R12IE4BOSA1 Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis
- RS Stock No.:
- 260-8890
- Mfr. Part No.:
- FF600R12IE4BOSA1
- Brand:
- Infineon
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Subtotal (1 unit)*
£467.99
(exc. VAT)
£561.59
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 7 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 1 | £467.99 |
| 2 + | £467.94 |
*price indicative
- RS Stock No.:
- 260-8890
- Mfr. Part No.:
- FF600R12IE4BOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 600A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 3.35kW | |
| Configuration | Dual | |
| Package Type | AG-PRIME2 | |
| Mount Type | Chassis | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 600A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 3.35kW | ||
Configuration Dual | ||
Package Type AG-PRIME2 | ||
Mount Type Chassis | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon PrimePACK 2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP IGBT4, emitter controlled 4 diode, NTC and fast switching chip. High short circuit capability, self limiting short circuit current, VCEsat with positive temperature coefficient.
Extended operation temperature
High DC stability
High power density
Standardized housing
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