Infineon IGBT, 80 A 1200 V, 3-Pin TO-247
- RS Stock No.:
- 260-5091
- Mfr. Part No.:
- IKQ40N120CH3XKSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 30 units)*
£131.70
(exc. VAT)
£158.10
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 120 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £4.39 | £131.70 |
| 60 - 120 | £4.171 | £125.13 |
| 150 + | £3.995 | £119.85 |
*price indicative
- RS Stock No.:
- 260-5091
- Mfr. Part No.:
- IKQ40N120CH3XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 500W | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.35V | |
| Maximum Operating Temperature | 175°C | |
| Width | 15.9 mm | |
| Height | 5.1mm | |
| Standards/Approvals | No | |
| Length | 41.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 500W | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.35V | ||
Maximum Operating Temperature 175°C | ||
Width 15.9 mm | ||
Height 5.1mm | ||
Standards/Approvals No | ||
Length 41.2mm | ||
Automotive Standard No | ||
The Infineon hard switching high speed IGBT3 in TO247 PLUS package with soft, fast anti-parallel emitter controlled diode.
High efficiency in hard switching and resonant topologies
Easy paralleling capability due to positive temperature coefficient in VCEsat
Low gate charge QG
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