Infineon IGP50N60TXKSA1 IGBT Transistor Module, 90 A 600 V PG-TO220-3

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Subtotal (1 tube of 50 units)*

£110.50

(exc. VAT)

£132.50

(inc. VAT)

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Units
Per unit
Per Tube*
50 - 50£2.21£110.50
100 - 200£2.10£105.00
250 +£1.967£98.35

*price indicative

RS Stock No.:
259-1524
Mfr. Part No.:
IGP50N60TXKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

90 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

3

Maximum Power Dissipation

333 W

Package Type

PG-TO220-3

The Infineon low loss IGBT has easy parallel switching capability due to positive temperature coefficient in Vcesat. It is high ruggedness, temperature stable behaviour. It is very soft, fast recovery anti-parallel emitter controlled diode.

Maximum junction temperature 175°C
Short circuit withstand time 5 micro second
Low EMI
Low gate charge
Very tight parameter distribution

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