Infineon FS75R12W2T7B11BOMA1 IGBT, 65 A 1200 V AG-EASY2B-711
- RS Stock No.:
- 258-0905
- Mfr. Part No.:
- FS75R12W2T7B11BOMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tray of 15 units)*
£425.295
(exc. VAT)
£510.36
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 28 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 15 - 15 | £28.353 | £425.30 |
| 30 + | £27.644 | £414.66 |
*price indicative
- RS Stock No.:
- 258-0905
- Mfr. Part No.:
- FS75R12W2T7B11BOMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 65 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | AG-EASY2B-711 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 65 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Package Type AG-EASY2B-711 | ||
The Infineon EasyPACK 2B 1200 V, 75 A six-pack IGBT module with TRENCHSTOP IGBT7, emitter controlled 7 diode, NTC and PressFIT contact technology.
Al2O3 substrate with low thermal resistance
High power density
Compact design
PressFIT contact technology
High power density
Compact design
PressFIT contact technology
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