STMicroelectronics STGH30H65DFB-2AG Single IGBT, 60 A 650 V H2PAK-2
- RS Stock No.:
- 248-4894
- Mfr. Part No.:
- STGH30H65DFB-2AG
- Brand:
- STMicroelectronics
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£2.99
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In Stock
- 460 unit(s) ready to ship
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Units | Per unit |
---|---|
1 - 4 | £2.99 |
5 - 9 | £2.85 |
10 - 24 | £2.56 |
25 - 49 | £2.31 |
50 + | £2.18 |
*price indicative
- RS Stock No.:
- 248-4894
- Mfr. Part No.:
- STGH30H65DFB-2AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Maximum Continuous Collector Current | 60 A | |
Maximum Collector Emitter Voltage | 650 V | |
Maximum Gate Emitter Voltage | 20V | |
Number of Transistors | 1 | |
Maximum Power Dissipation | 260 W | |
Package Type | H2PAK-2 | |
Configuration | Single | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 260 W | ||
Package Type H2PAK-2 | ||
Configuration Single | ||
The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCEsat temperature coefficient and very tight parameter distribution result in safer paralleling operation.
AEC-Q101 qualified
High speed switching series
Safer paralleling
Tight parameter distribution
Low thermal resistance
Soft and very fast recovery antiparallel diode
High speed switching series
Safer paralleling
Tight parameter distribution
Low thermal resistance
Soft and very fast recovery antiparallel diode
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