Specifications

Technical Reference

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Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	188W
	Number of Transistors	4
	Package Type	Q0PACK - Case 180AB
	Mount Type	Surface
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Length	55.2mm
	Standards/Approvals	RoHS
	Height	13.9mm
	Series	NXH80T120L3Q0S3G
	Width	32.8 mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 188W
	Number of Transistors 4
	Package Type Q0PACK - Case 180AB
	Mount Type Surface
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Length 55.2mm
	Standards/Approvals RoHS
	Height 13.9mm
	Series NXH80T120L3Q0S3G
	Width 32.8 mm
	Automotive Standard No

Datasheet - NXH80T120L3Q0S3G

The ON Semiconductor Q0PACK Module is a power module containing a T type neutral point clamped three level inverter stage. The integrated field stop trench IGBTs and fast recovery diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

Low Switching Loss

Low VCESAT

Compact 65.9 mm x 32.5 mm x 12 mm Package

Options with Pre applied Thermal Interface Material and without Pre applied TIM

Options with Solderable Pins and Press fit Pins thermistor

onsemi NXH80T120L3Q0S3G IGBT Module 1200 V Q0PACK - Case 180AB, Surface

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