onsemi NXH100B120H3Q0SG IGBT Module 1200 V Case 180AJ, Surface

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£39.82

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£47.78

(inc. VAT)

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1 - 9£39.82
10 +£34.32

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Packaging Options:
RS Stock No.:
245-6964
Mfr. Part No.:
NXH100B120H3Q0SG
Brand:
onsemi
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Brand

onsemi

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

2

Maximum Power Dissipation Pd

186W

Package Type

Case 180AJ

Mount Type

Surface

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Length

55.2mm

Height

13.9mm

Standards/Approvals

RoHS

Series

NXH100B120H3Q0SG

Automotive Standard

No

The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

1200 V Ultra Field Stop IGBTs

Low Reverse Recovery and Fast Switching SiC Diodes

1600 V Bypass and Anti parallel Diodes

Low Inductive Layout

Solderable Pins or Press Fit Pins

Thermistor options with pre applied thermal interface material and without pre applied TIM

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