onsemi NXH300B100H4Q2F2SG IGBT Module, 73 A 1000 V 93x47 (SOLDER PIN) (Pb-Free and Halide-Free Solder Pins), Q2BOOST -
- RS Stock No.:
- 245-6971P
- Mfr. Part No.:
- NXH300B100H4Q2F2SG
- Brand:
- onsemi
Subtotal 1 unit (supplied in a tray)*
£159.50
(exc. VAT)
£191.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 36 unit(s) shipping from 06 October 2025
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Units | Per unit |
---|---|
1 + | £159.50 |
*price indicative
- RS Stock No.:
- 245-6971P
- Mfr. Part No.:
- NXH300B100H4Q2F2SG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Maximum Continuous Collector Current | 73 A | |
Maximum Collector Emitter Voltage | 1000 V | |
Maximum Gate Emitter Voltage | ±20V | |
Number of Transistors | 6 | |
Maximum Power Dissipation | 79 W | |
Package Type | 93x47 (SOLDER PIN) (Pb-Free and Halide-Free Solder Pins), Q2BOOST - PIM53 | |
Select all | ||
---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 73 A | ||
Maximum Collector Emitter Voltage 1000 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 6 | ||
Maximum Power Dissipation 79 W | ||
Package Type 93x47 (SOLDER PIN) (Pb-Free and Halide-Free Solder Pins), Q2BOOST - PIM53 | ||
The ON Semiconductor Q2BOOST Module is a high−density, integrated power module combines high performance IGBTs with 1200 V SiC diode.
Extremely Efficient Trench with Field Stop Technology
Low Switching loss reduces system power dissipation
Module design offers high power density
Low inductive layout
3 channel in Q2BOOST package
These are Pb free devices
Low Switching loss reduces system power dissipation
Module design offers high power density
Low inductive layout
3 channel in Q2BOOST package
These are Pb free devices