Infineon FS100R12KE3BOSA1 IGBT Module, 140 A 1200 V

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Subtotal 2 units (supplied in a tray)*

£358.30

(exc. VAT)

£429.96

(inc. VAT)

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Units
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2 - 2£179.15
3 +£161.25

*price indicative

Packaging Options:
RS Stock No.:
244-5861P
Mfr. Part No.:
FS100R12KE3BOSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

140 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

480 W

Number of Transistors

6

The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 480 W, maximum gate threshold voltage is 6.5 V.

Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Maximum collector-emitter saturation voltage 2.15 V
Gate-emitter leakage current 400 nA

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