Infineon FP75R12KT4B11BOSA1 IGBT Module 1200 V

Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
244-5848
Mfr. Part No.:
FP75R12KT4B11BOSA1
Brand:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

7

Maximum Power Dissipation Pd

385W

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Height

17mm

Standards/Approvals

RoHS

Series

FP75R12KT4B11B

Width

62 mm

Length

122mm

Automotive Standard

No

The infineon IGBT module is suitable for auxiliary inverters, motor drives, servo drives etc.

Electrical Features

Low switching losses

Tvj op = 150° C

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

High power and thermal cycling capability

Integrated NTC temperature sensor

Copper base plate

Pressfit contact technology

Standard housing

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