Infineon IGBT Module 1200 V EconoPIM
- RS Stock No.:
- 244-5851
- Mfr. Part No.:
- FP75R12KT4BOSA1
- Brand:
- Infineon
Subtotal (1 tray of 10 units)*
£1,090.06
(exc. VAT)
£1,308.07
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 20 May 2026
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Units | Per unit | Per Tray* |
|---|---|---|
| 10 + | £109.006 | £1,090.06 |
*price indicative
- RS Stock No.:
- 244-5851
- Mfr. Part No.:
- FP75R12KT4BOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 385W | |
| Package Type | EconoPIM | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Series | FP75R12KT4B | |
| Height | 17mm | |
| Length | 122mm | |
| Width | 62.5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 385W | ||
Package Type EconoPIM | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Series FP75R12KT4B | ||
Height 17mm | ||
Length 122mm | ||
Width 62.5 mm | ||
Automotive Standard No | ||
The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 355 W, maximum gate threshold voltage is 6.5 V.
Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.15 V
Gate-emitter leakage current 400 nA
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