Infineon FP25R12W2T4B11BOMA1 IGBT Module, 39 A 1200 V

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Subtotal (1 tray of 15 units)*

£674.055

(exc. VAT)

£808.86

(inc. VAT)

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Temporarily out of stock
  • 999,999,990 unit(s) shipping from 24 September 2027
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Units
Per unit
Per Tray*
15 - 15£44.937£674.06
30 +£42.689£640.34

*price indicative

RS Stock No.:
244-5389
Mfr. Part No.:
FP25R12W2T4B11BOMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

39 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

+/-20V

Maximum Power Dissipation

175 W

Number of Transistors

7

The infineon IGBT module the maximum rated repetitive peak collector current is 50 A and maximum collector-emitter saturation voltag 2.25 V, gate threshold voltage is 6.4 V.

Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.05 nF

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