Infineon IGU04N60TAKMA1 Single IGBT, 4 A 600 V TO-251, Through Hole

This IGBT is a highly efficient transistor designed for use in demanding applications. With a maximum collector-emitter voltage of 600V and a continuous collector current rating of 4A, this TO-251 IGBT module excels in performance. The compact dimensions of 6.6 x 6.1 x 0.09 mm make it suitable for a variety of setups while operating effectively within a temperature range from -40°C to +175°C.

• Very low saturation voltage enhances energy efficiency
• Short-circuit withstand time of 5μs increases reliability
• High switching speed optimises system performance
• Low gate charge reduces driver power requirements
• Excellent thermal stability ensures consistent operation
• Tight parameter distribution enhances design flexibility

• Utilised in frequency inverters for efficient energy conversion
• Ideal for electric motor drives in industrial settings
• Effective in power supply where space is limited
• Suitable for renewable energy systems requiring high efficiency
• Designed for various automation demanding reliability

This device features a maximum collector-emitter voltage of 600V and a continuous collector current of 4A, making it suitable for high power applications. Its maximum power dissipation is rated at 42W, allowing it to handle substantial load demands effectively.

The gate-emitter voltage range of ±20V provides flexibility in driving configurations, allowing integration with a variety of control circuits while maintaining stable operation in diverse conditions.

With a thermal resistance of 3.5 K/W between junction and case, this IGBT ensures efficient heat management, allowing prolonged operation at high temperatures without performance degradation, which is essential for high-power applications.

The device operates between -40°C and +175°C, ensuring reliability in extreme temperatures, which is crucial for industrial applications exposed to varying environmental conditions.