Infineon FZ1600R33HE4BPSA1 Single IGBT Module, 1600 A 3300 V AG-IHVB130
- RS Stock No.:
- 236-5194
- Mfr. Part No.:
- FZ1600R33HE4BPSA1
- Brand:
- Infineon
Subtotal (1 unit)*
£1,326.43
(exc. VAT)
£1,591.72
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 1 unit(s) shipping from 01 June 2026
- Plus 2 unit(s) shipping from 02 September 2026
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Units | Per unit |
|---|---|
| 1 + | £1,326.43 |
*price indicative
- RS Stock No.:
- 236-5194
- Mfr. Part No.:
- FZ1600R33HE4BPSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 1600A | |
| Maximum Collector Emitter Voltage Vceo | 3300V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 3600kW | |
| Configuration | Single | |
| Package Type | AG-IHVB130 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.25V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 16.4mm | |
| Width | 62 mm | |
| Length | 109.9mm | |
| Standards/Approvals | IEC 60747, 60749 and 60068 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 1600A | ||
Maximum Collector Emitter Voltage Vceo 3300V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 3600kW | ||
Configuration Single | ||
Package Type AG-IHVB130 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.25V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 16.4mm | ||
Width 62 mm | ||
Length 109.9mm | ||
Standards/Approvals IEC 60747, 60749 and 60068 | ||
Automotive Standard No | ||
The Infineon single switch IGBT Module is with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. This module has high power density and AlSiC base plate for increased thermal cycling capability.
VCES is 3300 V
IC nom is 1600 A
ICRM is 3200 A
It retains high current density
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