- RS Stock No.:
- 225-0576
- Mfr. Part No.:
- IHW50N65R6XKSA1
- Brand:
- Infineon
156 In stock - FREE next working day delivery available
Price Each (In a Pack of 2)
£2.69
(exc. VAT)
£3.23
(inc. VAT)
Units | Per unit | Per Pack* |
---|---|---|
2 - 18 | £2.69 | £5.38 |
20 - 48 | £2.42 | £4.84 |
50 - 98 | £2.26 | £4.52 |
100 - 198 | £2.10 | £4.20 |
200 + | £1.965 | £3.93 |
*price indicative
- RS Stock No.:
- 225-0576
- Mfr. Part No.:
- IHW50N65R6XKSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon IHW50N65R6 is the 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.
Frequency range 20-75 kHz
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 83 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 251 W |
Package Type | PG-TO247-3 |
Pin Count | 3 |
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