Infineon IKW75N65EH5XKSA1, Type N-Channel IGBT, 90 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6675
- Mfr. Part No.:
- IKW75N65EH5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£9.14
(exc. VAT)
£10.96
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 50 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £4.57 | £9.14 |
| 10 - 18 | £4.155 | £8.31 |
| 20 - 48 | £3.88 | £7.76 |
| 50 - 98 | £3.61 | £7.22 |
| 100 + | £3.335 | £6.67 |
*price indicative
- RS Stock No.:
- 215-6675
- Mfr. Part No.:
- IKW75N65EH5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 90A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 395W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 41.42mm | |
| Standards/Approvals | JEDEC | |
| Series | High Speed Fifth Generation | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 90A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 395W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Length 41.42mm | ||
Standards/Approvals JEDEC | ||
Series High Speed Fifth Generation | ||
Automotive Standard No | ||
The Infineon insulated-gate bipolar transistor with high speed H5 technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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