Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3
- RS Stock No.:
- 215-6648
- Mfr. Part No.:
- IKB15N65EH5ATMA1
- Brand:
- Infineon
Price Each (In a Pack of 5)
£2.17
(exc. VAT)
£2.60
(inc. VAT)
920 In stock - FREE next working day delivery available
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £2.17 | £10.85 |
| 25 - 45 | £1.954 | £9.77 |
| 50 - 120 | £1.822 | £9.11 |
| 125 - 245 | £1.692 | £8.46 |
| 250 + | £1.562 | £7.81 |
*price indicative
- RS Stock No.:
- 215-6648
- Mfr. Part No.:
- IKB15N65EH5ATMA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20 V, ±30 V |
| Maximum Power Dissipation | 105 W |
| Package Type | PG-TO263-3 |
| Pin Count | 3 |
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