Infineon IHW50N65R5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3
- RS Stock No.:
- 215-6645
- Mfr. Part No.:
- IHW50N65R5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
£60.00
(exc. VAT)
£72.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 10 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £2.00 | £60.00 |
| 60 - 120 | £1.90 | £57.00 |
| 150 - 270 | £1.82 | £54.60 |
| 300 - 570 | £1.74 | £52.20 |
| 600 + | £1.62 | £48.60 |
*price indicative
- RS Stock No.:
- 215-6645
- Mfr. Part No.:
- IHW50N65R5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 282 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 282 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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