STMicroelectronics STGWA75H65DFB2 IGBT, 115 A 650 V, 3-Pin TO-247

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Subtotal (1 tube of 30 units)*

£87.78

(exc. VAT)

£105.33

(inc. VAT)

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  • 30 unit(s) ready to ship
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Units
Per unit
Per Tube*
30 - 90£2.926£87.78
120 - 240£2.847£85.41
270 - 480£2.771£83.13
510 - 990£2.701£81.03
1020 +£2.633£78.99

*price indicative

RS Stock No.:
206-7211
Mfr. Part No.:
STGWA75H65DFB2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

115 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

357 W

Number of Transistors

1

Package Type

TO-247

Pin Count

3

Transistor Configuration

Single

The STMicroelectronics Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package.

Maximum junction temperature: TJ = 175 °C
Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient

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