Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Maximum Continuous Collector Current	100 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	268 W
	Number of Transistors	1
	Package Type	TO-247
	Mounting Type	Through Hole
	Pin Count	3
	Transistor Configuration	Single
	Dimensions	15.87 x 4.82 x 20.82mm
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Maximum Continuous Collector Current 100 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 268 W
	Number of Transistors 1
	Package Type TO-247
	Mounting Type Through Hole
	Pin Count 3
	Transistor Configuration Single
	Dimensions 15.87 x 4.82 x 20.82mm
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -55 °C

Datasheet FGHL50T65SQ

Using the novel field stop 4th generation IGBT technology. FGHL50T65SQ is single IGBT. This IGBT offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.

VCE(sat) = 1.6V (typ.) @ IC = 50A

High speed switching

Low consuction loss

Low switching loss

Applications

PFC

End Products

Power supply

Air conditioner

onsemi FGHL50T65SQ IGBT, 100 A 650 V, 3-Pin TO-247, Through Hole

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