IXYS, Type N-Channel IGBT, 32 A 1700 V, 3-Pin TO-247AD, Through Hole
- RS Stock No.:
- 168-4504
- Mfr. Part No.:
- IXGH16N170
- Brand:
- IXYS
Subtotal (1 tube of 30 units)*
£200.13
(exc. VAT)
£240.15
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 330 unit(s) shipping from 09 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | £6.671 | £200.13 |
*price indicative
- RS Stock No.:
- 168-4504
- Mfr. Part No.:
- IXGH16N170
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current Ic | 32A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1700V | |
| Maximum Power Dissipation Pd | 190W | |
| Package Type | TO-247AD | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Series | High Voltage | |
| Width | 15.75 mm | |
| Length | 19.81mm | |
| Standards/Approvals | UL 94 V-0 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current Ic 32A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1700V | ||
Maximum Power Dissipation Pd 190W | ||
Package Type TO-247AD | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 150°C | ||
Series High Voltage | ||
Width 15.75 mm | ||
Length 19.81mm | ||
Standards/Approvals UL 94 V-0 | ||
Automotive Standard No | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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