IXYS, Type N-Channel IGBT, 12 A 1700 V, 3-Pin TO-247AD, Through Hole
- RS Stock No.:
- 168-4503
- Mfr. Part No.:
- IXGH6N170
- Brand:
- IXYS
Subtotal (1 tube of 30 units)*
£223.98
(exc. VAT)
£268.77
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- Shipping from 07 June 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | £7.466 | £223.98 |
*price indicative
- RS Stock No.:
- 168-4503
- Mfr. Part No.:
- IXGH6N170
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current Ic | 12A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1700V | |
| Maximum Power Dissipation Pd | 75W | |
| Package Type | TO-247AD | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 4V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Series | High Voltage | |
| Length | 19.81mm | |
| Standards/Approvals | International Standard Packages | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current Ic 12A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1700V | ||
Maximum Power Dissipation Pd 75W | ||
Package Type TO-247AD | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 4V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 150°C | ||
Series High Voltage | ||
Length 19.81mm | ||
Standards/Approvals International Standard Packages | ||
Automotive Standard No | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.