Infineon IKW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.:: 165-8131
Mfr. Part No.:: IKW25N120H3FKSA1
Brand:: Infineon

Infineon IKW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

104 In stock - FREE next working day delivery available

Price Each (In a Tube of 30)

£3.817

(exc. VAT)

£4.58

(inc. VAT)

Units	Per unit	Per Tube*
30 - 30	£3.817	£114.51
60 - 120	£3.626	£108.78
150 +	£3.473	£104.19

*price indicative

RS Stock No.:: 165-8131
Mfr. Part No.:: IKW25N120H3FKSA1
Brand:: Infineon

Technical Reference

Legislation and Compliance

COO (Country of Origin):: MY

Product Details

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	50 A
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	326 W
Package Type	TO-247
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	16.13 x 5.21 x 21.1mm
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-40 °C
Gate Capacitance	1430pF
Energy Rating	4.3mJ