Infineon IGW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

View all IGBTs
Bulk discount available

Subtotal (1 tube of 30 units)*

£99.00

(exc. VAT)

£118.80

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 180 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
30 - 30£3.30£99.00
60 - 120£3.135£94.05
150 +£3.003£90.09

*price indicative

RS Stock No.:
165-5770
Mfr. Part No.:
IGW25N120H3FKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

326 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

COO (Country of Origin):
CN

Infineon TrenchStop IGBT Transistors, 1100 to 1600V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links