IXYS IXGN320N60A3 Single IGBT Module, 320 A 600 V, 4-Pin SOT-227B, Surface Mount
- RS Stock No.:
- 125-8046
- Mfr. Part No.:
- IXGN320N60A3
- Brand:
- IXYS
Bulk discount available
Subtotal (1 unit)*
£39.48
(exc. VAT)
£47.38
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- 19 left, ready to ship
- Plus 19 left, shipping from 29 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | £39.48 |
| 2 - 4 | £34.27 |
| 5 - 9 | £33.36 |
| 10 - 19 | £32.49 |
| 20 + | £31.66 |
*price indicative
- RS Stock No.:
- 125-8046
- Mfr. Part No.:
- IXGN320N60A3
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current | 320 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 735 W | |
| Package Type | SOT-227B | |
| Configuration | Single | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 4 | |
| Switching Speed | 5kHz | |
| Transistor Configuration | Common Emitter | |
| Dimensions | 38.23 x 25.07 x 9.6mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current 320 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 735 W | ||
Package Type SOT-227B | ||
Configuration Single | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 4 | ||
Switching Speed 5kHz | ||
Transistor Configuration Common Emitter | ||
Dimensions 38.23 x 25.07 x 9.6mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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