STMicroelectronics STGHU30M65DF2AG Dual Gate IGBT, 84 A 650 V, 7-Pin HU3PAK, Surface Mount

View all IGBTs
Bulk discount available

Subtotal (1 unit)*

£2.80

(exc. VAT)

£3.36

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 595 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9£2.80
10 - 99£2.52
100 +£2.32

*price indicative

Packaging Options:
RS Stock No.:
285-638
Mfr. Part No.:
STGHU30M65DF2AG
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

84 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

441 W

Number of Transistors

1

Configuration

Dual Gate

Package Type

HU3PAK

Mounting Type

Surface Mount

Pin Count

7

This STMicroelectronics device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C
6 μs of minimum short circuit withstand time
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Excellent switching performance thanks to the extra driving kelvin pin

Related links