The Infineon FRAM is a 128 Kbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non volatile memories.

RoHS compliant
Low voltage operation
Low power consumption
AEC Q100 Grade 1 compliant
Sophisticated write protection scheme
Software protection using write disable instruction