- RS Stock No.:
- 186-7152
- Mfr. Part No.:
- FDG6304P
- Brand:
- onsemi
9000 In stock - FREE next working day delivery available
Added
Price Each (On a Reel of 3000)
£0.155
(exc. VAT)
£0.186
(inc. VAT)
Units | Per unit | Per Reel* |
3000 + | £0.155 | £465.00 |
*price indicative |
- RS Stock No.:
- 186-7152
- Mfr. Part No.:
- FDG6304P
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
These dual P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
-25 V, -0.41 A continuous, -1.5 A Peak.
RDS(ON) = 1.1 Ω @ VGS= -4.5 V,
RDS(ON) = 1.5 Ω @ VGS= -2.7 V.
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) <1.5 V).
Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
Compact industry standard SC70-6 surface mount package.
Applications
This product is general usage and suitable for many different applications.
RDS(ON) = 1.1 Ω @ VGS= -4.5 V,
RDS(ON) = 1.5 Ω @ VGS= -2.7 V.
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) <1.5 V).
Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
Compact industry standard SC70-6 surface mount package.
Applications
This product is general usage and suitable for many different applications.
Specifications
Attribute | Value |
---|---|
Package Type | SC-70 |
Mounting Type | Surface Mount |
Maximum Power Dissipation | 300 mW |
Pin Count | 6 |
Number of Elements per Chip | 2 |
Dimensions | 2.2 x 1.35 x 1mm |
Maximum Operating Temperature | +150 °C |
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