onsemi FDG6321C Digital Transistor Surface SC-70, 6-Pin

View all Bipolar Transistors
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Subtotal (1 pack of 25 units)*

£8.975

(exc. VAT)

£10.775

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 75£0.359£8.98
100 - 225£0.31£7.75
250 - 475£0.268£6.70
500 - 975£0.236£5.90
1000 +£0.215£5.38

*price indicative

Packaging Options:
RS Stock No.:
186-8443
Mfr. Part No.:
FDG6321C
Brand:
onsemi
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Brand

onsemi

Product Type

Digital Transistor

Package Type

SC-70

Mount Type

Surface

Transistor Configuration

Dual

Maximum Power Dissipation Pd

300mW

Pin Count

6

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

2.2mm

Series

FDG6321C

Height

1.1mm

Automotive Standard

No

These dual N & P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

N-Ch

0.50 A, 25 V

RDS(ON) = 0.45 Ω @ VGS= 4.5 V

RDS(ON) = 0.60 Ω @ VGS= 2.7 V

P-Ch

-0.41 A, -25 V

RDS(ON) = 1.1 Ω @ VGS= -4.5 V

RDS(ON) = 1.5 Ω @ VGS= -2.7 V

Very small package outline SC70-6.

Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).

Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).

Applications

This product is general usage and suitable for many different applications.

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