onsemi FDG6321C Dual Digital Transistor, 6-Pin SC-70
- RS Stock No.:
- 186-8443
- Mfr. Part No.:
- FDG6321C
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 25 units)*
£8.975
(exc. VAT)
£10.775
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 925 unit(s), ready to ship
Units | Per unit | Per Pack* |
---|---|---|
25 - 75 | £0.359 | £8.98 |
100 - 225 | £0.31 | £7.75 |
250 - 475 | £0.268 | £6.70 |
500 - 975 | £0.236 | £5.90 |
1000 + | £0.215 | £5.38 |
*price indicative
- RS Stock No.:
- 186-8443
- Mfr. Part No.:
- FDG6321C
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Package Type | SC-70 | |
Mounting Type | Surface Mount | |
Maximum Power Dissipation | 300 mW | |
Pin Count | 6 | |
Number of Elements per Chip | 2 | |
Dimensions | 2.2 x 1.35 x 1mm | |
Maximum Operating Temperature | +150 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Package Type SC-70 | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 300 mW | ||
Pin Count 6 | ||
Number of Elements per Chip 2 | ||
Dimensions 2.2 x 1.35 x 1mm | ||
Maximum Operating Temperature +150 °C | ||
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
N-Ch
0.50 A, 25 V
RDS(ON) = 0.45 Ω @ VGS= 4.5 V
RDS(ON) = 0.60 Ω @ VGS= 2.7 V
P-Ch
-0.41 A, -25 V
RDS(ON) = 1.1 Ω @ VGS= -4.5 V
RDS(ON) = 1.5 Ω @ VGS= -2.7 V
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
Applications
This product is general usage and suitable for many different applications.
0.50 A, 25 V
RDS(ON) = 0.45 Ω @ VGS= 4.5 V
RDS(ON) = 0.60 Ω @ VGS= 2.7 V
P-Ch
-0.41 A, -25 V
RDS(ON) = 1.1 Ω @ VGS= -4.5 V
RDS(ON) = 1.5 Ω @ VGS= -2.7 V
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
Applications
This product is general usage and suitable for many different applications.
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