onsemi FDG6321C Dual Digital Transistor, 6-Pin SC-70

View all Bipolar Transistors
Bulk discount available

Subtotal (1 pack of 25 units)*

£8.975

(exc. VAT)

£10.775

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 925 unit(s), ready to ship
Units
Per unit
Per Pack*
25 - 75£0.359£8.98
100 - 225£0.31£7.75
250 - 475£0.268£6.70
500 - 975£0.236£5.90
1000 +£0.215£5.38

*price indicative

Packaging Options:
RS Stock No.:
186-8443
Mfr. Part No.:
FDG6321C
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Package Type

SC-70

Mounting Type

Surface Mount

Maximum Power Dissipation

300 mW

Pin Count

6

Number of Elements per Chip

2

Dimensions

2.2 x 1.35 x 1mm

Maximum Operating Temperature

+150 °C

These dual N & P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

N-Ch
0.50 A, 25 V
RDS(ON) = 0.45 Ω @ VGS= 4.5 V
RDS(ON) = 0.60 Ω @ VGS= 2.7 V
P-Ch
-0.41 A, -25 V
RDS(ON) = 1.1 Ω @ VGS= -4.5 V
RDS(ON) = 1.5 Ω @ VGS= -2.7 V
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
Applications
This product is general usage and suitable for many different applications.

Related links