onsemi TIP121G NPN Darlington Transistor, 5 A dc 80 V dc HFE:1000, 3-Pin TO-220

Bulk discount available

Subtotal (1 tube of 50 units)*

£28.50

(exc. VAT)

£34.00

(inc. VAT)

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Units
Per unit
Per Tube*
50 - 50£0.57£28.50
100 - 450£0.399£19.95
500 - 950£0.345£17.25
1000 - 2450£0.301£15.05
2500 +£0.293£14.65

*price indicative

RS Stock No.:
186-7440
Mfr. Part No.:
TIP121G
Brand:
onsemi
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Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

5 A dc

Maximum Collector Emitter Voltage

80 V dc

Maximum Emitter Base Voltage

5 V dc

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

1000

Maximum Collector Base Voltage

80 V dc

Maximum Collector Emitter Saturation Voltage

4 V dc

Maximum Power Dissipation

65 W

Length

10.53mm

Maximum Operating Temperature

+150 °C

Width

4.83mm

Height

15.75mm

Minimum Operating Temperature

-65 °C

Dimensions

10.53 x 4.83 x 15.75mm

COO (Country of Origin):
CN
The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. TIP120, TIP121, TIP122 (NPN), TIP125, TIP126, TIP127 (PNP) are complementary devices.

High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 Adc
Collector-Emitter Sustaining Voltage @ 100 mA
VCEO(sus) = 60 Vdc (Min) TIP120, TIP125
VCEO(sus) = 80 Vdc (Min) TIP121, TIP126
VCEO(sus) = 100 Vdc (Min) TIP122, TIP127
Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Compact TO-220 AB Package

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