onsemi 2N6387G NPN Darlington Transistor, 10 A dc 60 V dc HFE:1000, 3-Pin TO-220
- RS Stock No.:
- 186-7344
- Mfr. Part No.:
- 2N6387G
- Brand:
- onsemi
Subtotal (1 tube of 50 units)*
£25.00
(exc. VAT)
£30.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 100 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | £0.50 | £25.00 |
*price indicative
- RS Stock No.:
- 186-7344
- Mfr. Part No.:
- 2N6387G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Transistor Type | NPN | |
| Maximum Continuous Collector Current | 10 A dc | |
| Maximum Collector Emitter Voltage | 60 V dc | |
| Maximum Emitter Base Voltage | 5 V dc | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Configuration | Single | |
| Number of Elements per Chip | 1 | |
| Minimum DC Current Gain | 1000 | |
| Maximum Collector Base Voltage | 60 V dc | |
| Maximum Collector Emitter Saturation Voltage | 3 V dc | |
| Length | 10.53mm | |
| Height | 15.75mm | |
| Width | 4.83mm | |
| Maximum Power Dissipation | 65 W | |
| Minimum Operating Temperature | -65 °C | |
| Dimensions | 10.53 x 4.83 x 15.75mm | |
| Maximum Operating Temperature | +150 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Transistor Type NPN | ||
Maximum Continuous Collector Current 10 A dc | ||
Maximum Collector Emitter Voltage 60 V dc | ||
Maximum Emitter Base Voltage 5 V dc | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Configuration Single | ||
Number of Elements per Chip 1 | ||
Minimum DC Current Gain 1000 | ||
Maximum Collector Base Voltage 60 V dc | ||
Maximum Collector Emitter Saturation Voltage 3 V dc | ||
Length 10.53mm | ||
Height 15.75mm | ||
Width 4.83mm | ||
Maximum Power Dissipation 65 W | ||
Minimum Operating Temperature -65 °C | ||
Dimensions 10.53 x 4.83 x 15.75mm | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- CN
The Power 8A 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.
High DC Current Gain - hFE=2500 (Typ) @Ic=4.0 Adc
Collector-Emitter Sustaining Voltage - @ 100 mAdc, Vceo(sus) = 60 Vdc (Min) - 2N6387, Vceo (sus) = 80 Vdc (Min) - 2N6388
Collector-Emitter Sustaining Voltage - @ 100 mAdc , Vceo(sus) = 60 Vdc (Min) - 2N6387, Vceo (sus) = 80 Vdc (Min) - 2N6388
Low Collector-Emitter Saturation Voltage- Vce(sat) = 2.0 Vdc (Max) @ Ic=5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
T0-220AB Compact Package
Collector-Emitter Sustaining Voltage - @ 100 mAdc, Vceo(sus) = 60 Vdc (Min) - 2N6387, Vceo (sus) = 80 Vdc (Min) - 2N6388
Collector-Emitter Sustaining Voltage - @ 100 mAdc , Vceo(sus) = 60 Vdc (Min) - 2N6387, Vceo (sus) = 80 Vdc (Min) - 2N6388
Low Collector-Emitter Saturation Voltage- Vce(sat) = 2.0 Vdc (Max) @ Ic=5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
T0-220AB Compact Package
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