Toshiba RN1106(TE85L,F) Digital Transistor, 100 mA NPN, 50 V, 3-Pin ESM

View all Bipolar Transistors
Temporarily out of stock
RS Stock No.:
540-6554
Mfr. Part No.:
RN1106(TE85L,F)
Brand:
Toshiba
Find similar products by selecting one or more attributes.
Select all

Brand

Toshiba

Product Type

Digital Transistor

Maximum DC Collector Current Idc

100mA

Maximum Collector Emitter Voltage Vceo

50V

Package Type

ESM

Mount Type

Surface

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

50V

Maximum Emitter Base Voltage VEBO

5V

Minimum DC Current Gain hFE

80

Transistor Polarity

NPN

Maximum Power Dissipation Pd

100mW

Maximum Transition Frequency ft

250MHz

Minimum Operating Temperature

-55°C

Pin Count

3

Maximum Operating Temperature

150°C

Height

0.7mm

Length

1.6mm

Series

RN1106

Standards/Approvals

No

Automotive Standard

No

RoHS Status: Exempt

COO (Country of Origin):
JP

Transistor with Built-in Resistor, BRT Series, Toshiba


Built-in bias resistors, use of fewer parts enables device size reduction and space-saving assembly

Wide resistance-value range makes product suitable for diverse applications

Complementary to products from RN1101 / RN2101 to RN1118 / RN2118

Applications: switching, inverter circuits, interface circuits, driver circuits

SSM package

Digital Transistors, Toshiba


Resistor-equipped bipolar transistors, also known as “Digital Transistors” or “Bias Resistor Transistors”, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.

Related links