Toshiba RN2101(TE85L,F) Digital Transistor, -100 mA PNP, -50 V, 3-Pin ESM

View all Bipolar Transistors
Temporarily out of stock
RS Stock No.:
540-6469
Mfr. Part No.:
RN2101(TE85L,F)
Brand:
Toshiba
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Brand

Toshiba

Product Type

Digital Transistor

Maximum DC Collector Current Idc

-100mA

Maximum Collector Emitter Voltage Vceo

-50V

Package Type

ESM

Mount Type

Surface

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

-50V

Maximum Power Dissipation Pd

100mW

Minimum Operating Temperature

-55°C

Transistor Polarity

PNP

Minimum DC Current Gain hFE

30

Maximum Emitter Base Voltage VEBO

10V

Maximum Transition Frequency ft

200MHz

Maximum Operating Temperature

150°C

Pin Count

3

Height

0.7mm

Length

1.6mm

Standards/Approvals

No

Series

RN2101

Automotive Standard

No

COO (Country of Origin):
JP

Transistor with Built-in Resistor, BRT Series, Toshiba


Built-in bias resistors, use of fewer parts enables device size reduction and space-saving assembly

Wide resistance-value range makes product suitable for diverse applications

Complementary to products from RN1101 / RN2101 to RN1118 / RN2118

Applications: switching, inverter circuits, interface circuits, driver circuits

SSM package

Digital Transistors, Toshiba


Resistor-equipped bipolar transistors, also known as “Digital Transistors” or “Bias Resistor Transistors”, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.

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