Infineon RF Bipolar Transistor, 120 mA NPN, 20 V, 3-Pin SOT-89

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Subtotal (1 reel of 1000 units)*

£178.00

(exc. VAT)

£214.00

(inc. VAT)

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Units
Per unit
Per Reel*
1000 - 1000£0.178£178.00
2000 - 4000£0.169£169.00
5000 +£0.158£158.00

*price indicative

RS Stock No.:
260-5066
Mfr. Part No.:
BFQ19SH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

120mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-89

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Minimum Operating Temperature

-65°C

Maximum Transition Frequency ft

5.5GHz

Maximum Emitter Base Voltage VEBO

3V

Minimum DC Current Gain hFE

70

Maximum Power Dissipation Pd

1W

Transistor Polarity

NPN

Pin Count

3

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Series

BFQ

Height

1.5mm

Length

4mm

Automotive Standard

AEC-Q101

The Infineon silicon bipolar RF transistor are suitable for low noise, low distortion broadband amplifiers in antenna and telecommunications systems.

Pb free package

For low noise, low distortion broadband amplifiers in antenna and telecommunications systems

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