Renesas Electronics HFA3096BZ Pent NPN/PNP Transistor, 65 mA, 8 V, 16-Pin SOIC
- RS Stock No.:
- 235-5230
- Mfr. Part No.:
- HFA3096BZ
- Brand:
- Renesas Electronics
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Units | Per unit |
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1 - 4 | £10.00 |
5 - 9 | £9.80 |
10 + | £9.05 |
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- RS Stock No.:
- 235-5230
- Mfr. Part No.:
- HFA3096BZ
- Brand:
- Renesas Electronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Renesas Electronics | |
Transistor Type | NPN/PNP | |
Maximum DC Collector Current | 65 mA | |
Maximum Collector Emitter Voltage | 8 V | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 16 | |
Number of Elements per Chip | 5 | |
Select all | ||
---|---|---|
Brand Renesas Electronics | ||
Transistor Type NPN/PNP | ||
Maximum DC Collector Current 65 mA | ||
Maximum Collector Emitter Voltage 8 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 16 | ||
Number of Elements per Chip 5 | ||
The Renesas Electronics HFA3096 is an ultra high frequency transistor array that is fabricated from the Renesas complementary bipolar UHF-1 process. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors
NPN transistor (fT) 8GHz
NPN current gain (hFE) is 130
NPN early voltage (VA) is 50V
PNP transistor (fT) is 5.5GHz
PNP current gain (hFE) is 60
PNP early voltage (VA)is 20V
Noise figure (50Ω) at 1.0GHz is 3.5dB
Collector to collector leakage <1pA
Complete isolation between transistors
NPN current gain (hFE) is 130
NPN early voltage (VA) is 50V
PNP transistor (fT) is 5.5GHz
PNP current gain (hFE) is 60
PNP early voltage (VA)is 20V
Noise figure (50Ω) at 1.0GHz is 3.5dB
Collector to collector leakage <1pA
Complete isolation between transistors
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