Renesas Electronics HFA3096BZ Transistor, 65 mA NPN + PNP, 8 V, 16-Pin SOIC
- RS Stock No.:
- 235-5229
- Mfr. Part No.:
- HFA3096BZ
- Brand:
- Renesas Electronics
Subtotal (1 tube of 48 units)*
£306.24
(exc. VAT)
£367.68
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 432 unit(s) shipping from 27 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 48 + | £6.38 | £306.24 |
*price indicative
- RS Stock No.:
- 235-5229
- Mfr. Part No.:
- HFA3096BZ
- Brand:
- Renesas Electronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 65mA | |
| Maximum Collector Emitter Voltage Vceo | 8V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Transistor Configuration | Dual | |
| Transistor Polarity | NPN + PNP | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150mW | |
| Maximum Operating Temperature | 125°C | |
| Pin Count | 16 | |
| Standards/Approvals | No | |
| Length | 9.9mm | |
| Height | 1.75mm | |
| Series | HFA3096 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 65mA | ||
Maximum Collector Emitter Voltage Vceo 8V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Transistor Configuration Dual | ||
Transistor Polarity NPN + PNP | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150mW | ||
Maximum Operating Temperature 125°C | ||
Pin Count 16 | ||
Standards/Approvals No | ||
Length 9.9mm | ||
Height 1.75mm | ||
Series HFA3096 | ||
Automotive Standard No | ||
The Renesas Electronics HFA3096 is an ultra high frequency transistor array that is fabricated from the Renesas complementary bipolar UHF-1 process. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors
NPN transistor (fT) 8GHz
NPN current gain (hFE) is 130
NPN early voltage (VA) is 50V
PNP transistor (fT) is 5.5GHz
PNP current gain (hFE) is 60
PNP early voltage (VA)is 20V
Noise figure (50Ω) at 1.0GHz is 3.5dB
Collector to collector leakage <1pA
Complete isolation between transistors
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