These dual N- and P-Channel enhancement mode power field effect transistors are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Q1: N-Channel
7.0 A, 30 V
RDS(ON) = 28 mΩ @ VGS = 10 V
RDS(ON) = 40 mΩ @ VGS = 4.5 V
Q2: P-Channel
-5 A,-30 V
RDS(ON) = 52 mΩ @ VGS = -10 V
RDS(ON) = 80 mΩ @ VGS = -4.5 V
Fast switching speed
High power and handling capability in a widely used surface mount package
Applications
This product is general usage and suitable for many different applications.