onsemi MJW3281AG NPN Digital Transistor, 230 V, 3-Pin TO-247
- RS Stock No.:
- 186-7419
- Mfr. Part No.:
- MJW3281AG
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tube of 30 units)*
£65.52
(exc. VAT)
£78.63
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 30 unit(s) shipping from 14 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | £2.184 | £65.52 |
| 120 - 480 | £1.869 | £56.07 |
| 510 - 990 | £1.657 | £49.71 |
| 1020 + | £1.601 | £48.03 |
*price indicative
- RS Stock No.:
- 186-7419
- Mfr. Part No.:
- MJW3281AG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Transistor Type | NPN | |
| Maximum Collector Emitter Voltage | 230 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Emitter Base Voltage | 5 V dc | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Dimensions | 16.26 x 5.3 x 21.08mm | |
| Maximum Operating Temperature | +150 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Transistor Type NPN | ||
Maximum Collector Emitter Voltage 230 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Emitter Base Voltage 5 V dc | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Dimensions 16.26 x 5.3 x 21.08mm | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- CN
The MJW3281A Bipolar Complementary Audio Power Transistor is a power transistor for high power audio, disk head positioners and other linear applications.
Designed for 100 W Audio Frequency
Gain Complementary: Gain Linearity from 100 mA to 7 A hFE = 45 (Min) @ IC = 8 A
Low Harmonic Distortion
High Safe Operation Area - 1 A/100 V @ 1 Second
High fT - 30 MHz Typical
Gain Complementary: Gain Linearity from 100 mA to 7 A hFE = 45 (Min) @ IC = 8 A
Low Harmonic Distortion
High Safe Operation Area - 1 A/100 V @ 1 Second
High fT - 30 MHz Typical
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