onsemi FDMA430NZ Digital Transistor, 6-Pin MicroFET 2 x 2
- RS Stock No.:
- 186-7383
- Mfr. Part No.:
- FDMA430NZ
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£729.00
(exc. VAT)
£876.00
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 12,000 unit(s), ready to ship
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £0.243 | £729.00 |
*price indicative
- RS Stock No.:
- 186-7383
- Mfr. Part No.:
- FDMA430NZ
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Package Type | MicroFET 2 x 2 | |
Mounting Type | Surface Mount | |
Maximum Power Dissipation | 2.4 W | |
Pin Count | 6 | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Dimensions | 2 x 2 x 0.75mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Package Type MicroFET 2 x 2 | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 2.4 W | ||
Pin Count 6 | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Dimensions 2 x 2 x 0.75mm | ||
- COO (Country of Origin):
- TH
This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.
RDS(on) = 40mΩ @ VGS = 4.5 V, ID = 5.0A
RDS(on) = 50mΩ@ VGS = 2.5 V, ID = 4.5A
Low Profile-0.8mm maximum-in the new packageMicroFET 2x2 mm
HBM ESD protection level > 2.5k V typical (Note 3)
Free from halogenated compounds and antimony oxides
Applications
This product is general usage and suitable for many different applications.
RDS(on) = 50mΩ@ VGS = 2.5 V, ID = 4.5A
Low Profile-0.8mm maximum-in the new packageMicroFET 2x2 mm
HBM ESD protection level > 2.5k V typical (Note 3)
Free from halogenated compounds and antimony oxides
Applications
This product is general usage and suitable for many different applications.
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