Nexperia PBSS4350Z,135 NPN Transistor, 3 A, 50 V, 4-Pin SOT-223
- RS Stock No.:
- 166-0622
- Mfr. Part No.:
- PBSS4350Z,135
- Brand:
- Nexperia
Subtotal (1 reel of 4000 units)*
£480.00
(exc. VAT)
£560.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 01 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
4000 + | £0.12 | £480.00 |
*price indicative
- RS Stock No.:
- 166-0622
- Mfr. Part No.:
- PBSS4350Z,135
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Nexperia | |
Transistor Type | NPN | |
Maximum DC Collector Current | 3 A | |
Maximum Collector Emitter Voltage | 50 V | |
Package Type | SOT-223 (SC-73) | |
Mounting Type | Surface Mount | |
Maximum Power Dissipation | 2 W | |
Minimum DC Current Gain | 200 | |
Transistor Configuration | Single | |
Maximum Collector Base Voltage | 60 V | |
Maximum Emitter Base Voltage | 6 V | |
Maximum Operating Frequency | 100 MHz | |
Pin Count | 4 | |
Number of Elements per Chip | 1 | |
Dimensions | 1.7 x 6.7 x 3.7mm | |
Maximum Operating Temperature | +150 °C | |
Select all | ||
---|---|---|
Brand Nexperia | ||
Transistor Type NPN | ||
Maximum DC Collector Current 3 A | ||
Maximum Collector Emitter Voltage 50 V | ||
Package Type SOT-223 (SC-73) | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 2 W | ||
Minimum DC Current Gain 200 | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage 60 V | ||
Maximum Emitter Base Voltage 6 V | ||
Maximum Operating Frequency 100 MHz | ||
Pin Count 4 | ||
Number of Elements per Chip 1 | ||
Dimensions 1.7 x 6.7 x 3.7mm | ||
Maximum Operating Temperature +150 °C | ||
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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