N-Channel MOSFET, 64 A, 650 V, 3-Pin TO-247AC Vishay SiHG64N65E-GE3
- RS Stock No.:
- 903-4493
- Mfr. Part No.:
- SiHG64N65E-GE3
- Brand:
- Vishay
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 903-4493
- Mfr. Part No.:
- SiHG64N65E-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 64 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247AC | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 47 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 520 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 239 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Series | E Series | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 64 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 47 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 520 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 239 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Series E Series | ||
- COO (Country of Origin):
- CN