Vishay Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212-8 SI7900AEDN-T1-GE3
- RS Stock No.:
- 818-1416
- Mfr. Part No.:
- SI7900AEDN-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
£8.08
(exc. VAT)
£9.70
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.808 | £8.08 |
| 100 - 240 | £0.767 | £7.67 |
| 250 - 490 | £0.646 | £6.46 |
| 500 - 990 | £0.606 | £6.06 |
| 1000 + | £0.566 | £5.66 |
*price indicative
- RS Stock No.:
- 818-1416
- Mfr. Part No.:
- SI7900AEDN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | PowerPAK 1212-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 36 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 1.5 W | |
| Transistor Configuration | Common Drain | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Length | 3.15mm | |
| Typical Gate Charge @ Vgs | 10.5 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.07mm | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type PowerPAK 1212-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 36 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1.5 W | ||
Transistor Configuration Common Drain | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Length 3.15mm | ||
Typical Gate Charge @ Vgs 10.5 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Width 3.15mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.07mm | ||
- COO (Country of Origin):
- CN