Vishay Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212-8 SI7900AEDN-T1-GE3

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
818-1416
Mfr. Part No.:
SI7900AEDN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

20 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

36 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Common Drain

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Width

3.15mm

Length

3.15mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

10.5 nC @ 4.5 V

Transistor Material

Si

Height

1.07mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

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